complementary metal oxide semiconductor
英 [ˌkɒmplɪˈmentri ˈmetl ˈɒksaɪd ˌsemikənˈdʌktə(r)]
美 [ˌkɑːmplɪˈmentri ˈmetl ˈɑːksaɪd ˈsemikəndʌktər]
网络 互补金属氧化物半导体; 互补型金属氧化物半导体; 互补性氧化金属半导体; 补充金属氧化物半导体; 半导体
双语例句
- To boot an operating system, the BIOS runtime searches for devices that are both active and bootable in the order of preference defined by the complementary metal oxide semiconductor ( CMOS) settings.
要引导一个操作系统，BIOS运行时会按照CMOS的设置定义的顺序来搜索处于活动状态并且可以引导的设备。 - Complementary metal oxide semiconductor device
互补金属氧化物半导体器件 - The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS.
声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。 - 1/ f optimization of a complementary metal oxide semiconductor focal plane array input circuit
互补金属氧化物半导体焦平面阵列输入电路1/f噪声的优选 - A complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) for the sensitive material of vanadium dioxide ( VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路（ROIC）。 - The chip was fabricated in standard digital complementary metal-oxide-semiconductor process.
该模数转换器已在标准数字互补性金属氧化物半导体工艺下实现。 - A development of infrared focal plane array ( IRFPA) complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) is introduced. The circuit principle of ROIC, time sequence of multiplexer, circuit parameter, layout design and technology analysis are described.
介绍了一种红外焦平面阵列（IRFPA）互补金属氧化物半导体（CMOS）读出集成电路（ROIC）的研制方案，叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。 - Since the switched current technology is employed, this system is fully compatible with a standard digital Complementary metal oxide semiconductor ( CMOS) technology, and is easily to be integrated in mixed analog digital system and implemented in very large scale integrated circuit ( VLSI).
由于采用开关电流技术，该系统电路可以直接采用标准的数字互补型金属氧化物半导体（CMOS）工艺来实现，便于模、数混合集成，易于超大规模集成电路（VLSI）的制作。 - Resistive random access memory ( RRAM) is considered as one of the most promising candidates for the next generation of high-density non-volatile memory, owing to its simple fabricating process and compatibility with complementary metal oxide semiconductor ( CMOS) technology.
阻变存储器因其结构简单，易于集成，与现有CMOS工艺兼容性高，被认为是最具潜力的下一代高密度非易失性存储器之一。